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APT8014JLL
800V 42A 0.140
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
G S
All Ratings: TC = 25C unless otherwise specified.
APT8014JLL UNIT Volts Amps
800 42 168 30 40 595 4.76 -55 to 150 300 42 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.140 100 500 100 3 5
(VGS = 10V, 21A)
Ohms A nA Volts
12-2003 050-7105 Rev A
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8014JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 52A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 52A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 52A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 52A, RG = 3
MIN
TYP
MAX
UNIT
7238 1402 248 285 30 170 20 19 69 15 1091 1135 1662 1383 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
42 168 1.3 930 29 10
(Body Diode) (VGS = 0V, IS = -ID52A)
Reverse Recovery Time (IS = -ID52A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 3.63mH, RG = 25, Peak IL = 42A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID42A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.15
0.7 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
12-2003
0.5 0.10 0.3 0.05 0.1 0.05 10-5 10-4
050-7105 Rev A
Z
JC
0
SINGLE PULSE 10
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
140
ID, DRAIN CURRENT (AMPERES)
RC MODEL Junction temp. ( "C) 0.0492 0.0273F
APT8014JLL
120 100 80 60 5.5V 40 20 0 5V VGS =15 & 10V 8V 7V 6.5V
6V
Power (Watts)
0.142
0.469F
0.0189 Case temperature
44.2F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 120 100 80 60 TJ = +25C 40 20 0 TJ = +125C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
NORMALIZED TO = 10V @ 26A V
GS
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 VGS=10V 1.10
1.00
VGS=20V
0.90 0.80
0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
45 40
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
35 30 25 20 15 10 5 0 25
1.10
1.05
1.00
0.95
0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 26A = 10V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0
1.5
0.9
12-2003 050-7105 Rev A
1.0
0.8
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT8014JLL
168 100
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
10,000
C, CAPACITANCE (pF)
Ciss
50
100S
10 5 TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1,000
Coss
1mS
10mS
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 100
= 52A
12
VDS= 160V VDS= 400V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
TJ =+150C TJ =+25C 10
8
VDS= 640V
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 160 140 120
td(on) and td(off) (ns)
V R = 3
0 0
50
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140
V
DD G
1
td(off) 120 100
DD G
= 533V
R
= 3
T = 125C
J
L = 100H = 533V
tf
tr and tf (ns)
100 80 60 40 20
T = 125C
J
80 60 40 20 tr
L = 100H
td(on) 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
30
40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 12000
V I
DD
0 10
20
30
3000 2500
SWITCHING ENERGY (J)
V
= 533V
= 533V
R
= 3
D J
= 52A
T = 125C
J
10000
SWITCHING ENERGY (J)
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
L = 100H
2000 1500
E ON includes diode reverse recovery.
8000 6000
Eon 1000 500 0 10 Eoff
12-2003
4000 2000 0
Eon
050-7105 Rev A
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT8014JLL
10 % TJ = 125 C td(on) 90% tr 5%
Switching Energy
90%
Gate Voltage
T = 125 C J
td(off)
Drain Voltage
90% t f 10%
Drain Current Switching Energy
5% 10 %
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7105 Rev A
12-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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